Resistive switching characteristics of Ag2O/TiO2 bilayer film based memristor

With the increasing importance of artificial intelligence (AI), significant effort has been devoted to the development of memory device that seek to emulate the energy-efficient information storage and processing. In this work, a memristive device with Ag/Ag2O/TiO2/FTO structure was fabricated by the sol-gel method. The as-prepared memristive device exhibits bipolar resistive switching characteristics under direct-current-voltage sweep. In particular, this memristive device with Ag2O/TiO2 layer annealing at 450 ℃ has a low switching voltage after 150 successive cycles. At the same time, the switching window of the device with Ag2O/TiO2 layer annealing at 450 ℃ is obvious, and the switching resistances are stable and easy to distinguish. This device exhibits some obvious advantages of low power consumption, remarkable repeatability, excellent endurance, and stable memory state. As a result, this Ag2O/TiO2 bilayer film based memristive device has great potential to be used as information storage and processor device for AI applications.