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Fabrication and characterization of niobium oxynitride thin films for energy and environmental applications

薄膜 材料科学 无定形固体 溅射 氮化铌 X射线光电子能谱 溅射沉积 碳膜 粒度 氮化物 分析化学(期刊) 光电子学 制作 物理气相沉积 兴奋剂 陶瓷
作者
Rongbin Ye,Masato Obara,Mamoru Baba
标识
DOI:10.1117/12.3084937
摘要

In this study, niobium oxynitride (NbOxNy) thin films were prepared using radio RF magnetron sputtering from an Nb₂O₅ target. Nitrogen gas was used as the precursor for N-doping due to its dry process and environment friendly. By X-ray diffraction and SEM cross-section analysis, NbOxNy thin film was in an amorphous state and its growth rate is ~50 nm/h. The cutoff wavelength of the absorption spectra of NbOxNy thin films is moreover shifted towards the visible region (red shift) with increasing film thickness, which is implied to dope N into Nb₂O₅. Similarly, the conductivity of the NbOxNy thin film is about 500 times larger than that of the Nb₂O₅ thin film. According to AFM analysis, NbOxNy thin films have smooth surfaces and grain sizes were slightly increased while film thickness increased. Furthermore, the co-presence of Nb-O, as well as Nb-O-N and Nb-N the film was characterized, and the N doping level of the sample was estimated at about 27.8 at. % from the XPS spectra. The electrochemical behaviors of NbOxNy thin films were characterized by capacity measurement and cycling performance. The volume capacity density of NbOxNy thin film is about 189 μAh/cm2 μm, which is over twice as large as that of the amorphous Nb₂O₅ films, due to the formation of metal-rich niobium nitrides in the RF sputtering process. In addition, electrochemical characteristics of thin film rechargeable lithium-ion battery composed of LiMn₂O₄ thin films of ca. 720 nm, LiPON electrolyte thin films of ca. 1.0 μm and NbOxNy thin films of ca. 200 nm were also investigated. At a discharge current of 10 μAh/cm², the maximum discharge capacity of 19.3 μAh/cm² was obtained, and the coulombic efficiency was all over 90% except for the first few cycles. Furthermore, NbOxNy thin films demonstrated a remarkable degradation efficiency of 92.1 % within 480 min under white LED light irradiation, following a pseudo-first-order kinetic model equation with a rate constant of k = 5.5 x 10⁻³ min⁻¹, which is about twice as large as that of Nb₂O₅ thin films. These findings highlight the potential of the NbOxNy thin films as an efficient and sustainable material for energy and photocatalytic degradation.

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