Solar-blind ultraviolet photodetector based on Nb2C/β-Ga2O3 heterojunction

Abstract β -Ga 2 O 3 has been widely investigated for its stability and thermochemical properties. However, the preparation of β -Ga 2 O 3 thin films requires complex growth techniques and high growth temperatures, and this has hindered the application of β -Ga 2 O 3 thin films. In this study, β -Ga 2 O 3 thin films with good crystalline quality were prepared using a green method, and an ultraviolet (UV) detector based on β -Ga 2 O 3 with a photocurrent of 2.54 × 10 –6 A and a dark current of 1.19 × 10 –8 A has been developed. Two-dimensional materials have become premium materials for applications in optoelectronic devices due to their high conductivity. Here, we use the suitable energy band structure between Nb 2 C and Ga 2 O 3 to create a high carrier migration barrier, which reduces the dark current of the device by an order of magnitude. In addition, the device exhibits solar-blind detection, high responsiveness (28 A W −1 ) and good stability. Thus, the Nb 2 C/ β -Ga 2 O 3 heterojunction is expected to be one of the promising devices in the field of UV photoelectric detection.