有机发光二极管
材料科学
亮度
图层(电子)
无定形固体
光电子学
二极管
有机半导体
薄膜
活动层
热的
电致发光
电压
瓶颈
半导体
外延
工程物理
电子迁移率
发光二极管
纳米技术
作者
Wen J. Li,Xiaoyan Ren,M. He,Feng Zhu,Donghang Yan
标识
DOI:10.1002/lpor.202502043
摘要
Abstract Organic light‐emitting diode (OLED) urgently needs to improve brightness to meet the demands from diverse light scenes in intelligent era. Owing to their high mobility and superior thermal stability, crystalline organic semiconductors possess intrinsic advantages than present amorphous thin‐film route to break through the bottleneck in OLED field and create high brightness devices. In this work, a deep‐blue crystalline thin‐film OLED (C‐OLED) is reported, which can achieve high brightness at low driving voltage (4817 cd m −2 @ 4 V). By integrating band‐like crystalline emitting layer and controllable p/n doping, C‐OLEDs demonstrate low turn‐on voltage, low series‐resistance joule‐heat loss ratio, and high power efficiency. This technological advancement, built on weak epitaxy growth (WEG) method and crystalline organic solid‐solutions (OSS) thin films, further validates the potential of the crystalline thin‐film approach in optimizing OLED performance, and provides a new engineering solution for the development of high‐performance organic light‐emitting devices.
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