光激发
飞秒
材料科学
纳秒
电场
电子
电荷(物理)
光电子学
放松(心理学)
电子转移
轨道能级差
载流子
化学物理
分子物理学
动力学
硅
时间常数
领域(数学)
光电导性
分子轨道
分子动力学
光化学
电子传输链
密度泛函理论
原子单位
纳米技术
重组
作者
Xiaochun Gao,Xingyue Lv,Qingfeng Zhai,Xi-Tao Yin,Xiaoning Wang,Shaoqi Hou,Jiayan Liao,Xiaoguang Ma,Guoxiu Wang
出处
期刊:Small
[Wiley]
日期:2025-11-06
卷期号:21 (51): e05035-e05035
标识
DOI:10.1002/smll.202505035
摘要
Defect engineering, while beneficial for g-C3N4 photocatalysis, often impairs charge transfer if improperly controlled. Herein, shallow defect states are successfully introduced into S-doped and C vacant g-C3N4 (CN-ES) via a dual-solvent-assisted synthetic approach, aiming to maximize the photocarrier transport superiority. Notably, these elevated defect energy levels reduced the photoexcitation time to the femtosecond scale and dramatically shortened the average charge relaxation to 35.84 ps, significantly accelerating the charge transfer kinetics of g-C3N4. Importantly, the shallow defect states are critical to evoke a moderate electron-trapping ability as reflected by shortening the electron long-lived time from almost nanosecond time-scale into 323.78 ps, and thus acted as a temper electron reservoir to enhance photocarrier separation efficiency. Additionally, non-radiative recombination is also suppressed due to the shallow defect states, yielding the slowest pseudo-first-order rate constant (0.053 s-1). Theoretical calculations further elucidated that this optimized photocarrier transfer stems from an enhanced polarized electric field and asymmetrical charge distributions of highest occupied molecular orbital (HOMO)/lowest unoccupied molecular orbital (LUMO). Consequently, in a large-scale application test, CN-ES achieved excellent photocathodic protection for commercialized 304 stainless steel mesh, demonstrating outstanding long-term open-circuit potential retention of 96.5% from an initial -0.577 V.
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