光探测
光电探测器
响应度
光电子学
材料科学
铁电性
光功率
钙钛矿(结构)
光电导性
激发
光通信
吸收(声学)
加密
偏压
光学
瞬态(计算机编程)
载流子寿命
瞬态响应
比探测率
电压
电场
响应时间
铁电电容器
纳米线
电子迁移率
热电性
Crystal(编程语言)
功率(物理)
作者
Qingwen Meng,Ning Sui,Ziying Yang,Xiujun Gao,Jinjun Bai,Xilian Jin,Xiaoting Wang,Cui-Li Cui,Haibo Lin,Hanzhuang Zhang,Jiajia Ning,Yinghui Wang
摘要
We developed a transverse photodetector using EA4Pb3Br10 films that demonstrates excellent self-powered performance: a responsivity (R) of 0.11 A W−1 and a detectivity (D*) of 1.41 × 109 Jones. At 3.0 V bias, performance enhances dramatically (R = 11.40 A W−1, D* = 1.42 × 1011 Jones). Excitation intensity-dependent transient absorption measurements reveal a carrier diffusion length of ∼2.90 μm, accounting for the superior optoelectronic performance. Frequency-modulation tests demonstrate the bias voltage effectively aligns ferroelectric domains, thereby restricting the barrier associated with crystal domains and resulting in significantly faster response times than those under self-powered operation. The implemented encrypted optical communication system operates reliably in power-scarce environments; meanwhile, our single-pixel imaging system, which functions without an external power, is also designed. Both of them are suitable for responding to sudden power outages in emergency scenarios. This work advances the field of high-performance photodetection while expanding practical optoelectronic applications.
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