热导率
材料科学
硼
砷化镓
半导体
砷化物
电导率
半导体器件
硼同位素
分析化学(期刊)
光电子学
纳米技术
化学
复合材料
物理化学
有机化学
图层(电子)
作者
Jae‐Hoon Kim,Dongwook Lee,Huan Wu,Joon Sang Kang
出处
期刊:Advanced Science
[Wiley]
日期:2025-04-09
卷期号:12 (25): e2502544-e2502544
被引量:1
标识
DOI:10.1002/advs.202502544
摘要
High thermal conductivity materials are critical for advanced thermal management applications. The semiconductor cubic boron arsenide (c-BAs) has drawn significant attention due to its ultrahigh thermal conductivity. In this study, high-quality isotope-enriched cubic boron arsenide (c-10BAs and c-11BAs) crystals are synthesized to further enhance the thermal conductivity of c-BAs and measured a room temperature thermal conductivity of 1500 W m-1 K-1 for the c-11BAs. This value is the highest thermal conductivity for isotope-enriched c-BAs reported so far. The experimental study, together with ab initio calculation, verifies the high quality with reproducibility of the crystals. The exceptionally high thermal conductivity of the isotope-enriched BAs, combined with their semiconductor properties, holds significant potential for improving thermal management in semiconductor devices and electronics packaging applications.
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