Linear pseudo-halogen anion passivating defects for MAPbI3 perovskite solar cells

The development of perovskite solar cells has improved rapidly. However, PSCs generally suffer from instability, due to the detrimental defects. Additive engineering is a favorable method for defect passivation. In this work, the linear pseudo-halogen salt, KSCN, is introduced into the MAPbI3 perovskite film to improve the performance of PSC. The trap density of cells with SCN− is decreased significantly. The SCN− not only can fill halogen vacancies to reduce the halide-related defects, but also can interact with the uncoordinated Pb2+ via coordinate bond to stabilize perovskite lattice structure. Moreover, the performance of devices with other linear pseudo-halogen anions (OCN−, SeCN−) are also investigated. Due to the improved short circuit current density, the power conversion efficiency of devices increases from 18.02% (PVK) to 20.41% (PVK–SCN-), 19.53% (PVK–OCN-) and 19.23% (PVK–SeCN-), respectively. After introducing pseudo-halide anions, the devices showed robust stability under the ambient environment.