Efficient Ohmic Contact in Monolayer CrX2N4 (X = C, Si) Based Field‐Effect Transistors

Abstract Developing Ohmic contact systems or achieving low contact resistance is significant for high‐performance semiconductor devices. This work comprehensively investigates the interfacial properties of CrX 2 N 4 (X = C, Si) based field‐effect transistors (FETs) with different metal (Ag, Au, Cu, Ni, Pd, Pt, Ti, and graphene) electrodes by using electronic structure calculations and quantum transport simulations. It is highlighted that the stronger interlayer coupling allows CrC 2 N 4 to form an n‐type Ohmic contact with Ti electrode in the vertical direction. Furthermore, the absence of tunneling barrier at the CrC 2 N 4 –Ti interface greatly improves the electron injection efficiency. On the other hand, the studied metals form Schottky contact with CrC 2 N 4 at the lateral interface due to Fermi level pinning (FLP) effects. Surprisingly, the strong FLP effects restrict the Schottky barrier heights of CrSi 2 N 4 ‐metal contacts to a narrow range. Where Ag, Au, Ni, Pd, Pt, Ti electrodes and Ag, Ti electrodes form ideal ohmic contact with CrSi 2 N 4 in the vertical and lateral directions, respectively, while the other metals form quasi‐ohmic contact. Ti exhibits the highest contact performance as the electrode in both CrC 2 N 4 and CrSi 2 N 4 based FETs. The findings may provide fundamental understanding for designing high‐performance and energy‐efficient FETs based on CrX 2 N 4 .