A sight of view on electrical impacts, structural properties and surface roughness of tungsten trioxide thin film: effect of substrate temperatures in WO3/Si device fabrication

Abstract Monoclinic WO 3 thin films have been effectively deposited by a simple spray pyrolysis technique at a molar concentration of 0.01 M on a glass substrate in the temperature range of 473 to 673 K. These WO 3 films were used as an interlayer between the metal and the semiconductor, which formed the basic structure of the photodetector. Effect of substrate temperature on WO 3 films during the process of the deposition was systematically interpreted with respect to the structural, morphological, optical and electrical properties of the WO 3 films. The x-ray diffraction pattern revealed the polycrystalline nature of the prepared films with monoclinic phases. At the substrate temperature of 623 K, the nano-thin films were strongly bonded to each other as observed from the FE-SEM images. Visible and ultraviolet spectroscopies indicated the band gap (Eg) of the WO 3 thin film is 3.30 eV. The dc electrical study recorded a sharp increase in the electrical conductivity of the prepared film at substrate temperature of 623 K for tungsten trioxide. It is worth noting that all diodes showed a positive photoresponse under illumination. In particular, the photodetector with the thickness of 300 nm showed higher responsivity 0.02 A/W and detection specificity 8.29 × 10 10 Jones.