Noise analysis of NC-GAAFET cylindrical nanowire with non-uniform interface trap charge

Abstract In this article, low to high frequency noise behavior analysis of negative capacitance gate-all-around field effect transistor (NC-GAAFET) MFIS structure Silicon Nanowire (SiNW) device, using Sentauras TCAD simulations, is investigated. The NC-GAAFET SiNW yields on current (I ON ) 5.31 times larger and off current (I OFF ) is significantly reduced by ∼ 10 5 orders compared to baseline SiNW. The device exhibits an excellent switching ratio of 5.2 × 10 14 . Average subthreshold swing for the NC-GAAFET is 33 mV/dec compared to 64 mV/dec of baseline nanowire. The Negative-DIBL for the device is −20 mV/V which outshines earlier findings. Furthermore, the drain current noise power spectral density (PSD) S id , and input referred gate voltage noise PSD (S vg ) are comprehensively analyzed in the presence of Gaussian trap (non-uniform) distribution. The analysis indicates that, flicker or (1/f) noise dominates in low frequency regime, generation-recombination (G-R) noise is more influential in mid frequency regime whereas in very high frequency regime diffusion noise is leading. The device exhibits least S id (NET) and S vg (NET) at t fe = 6 nm compared to baseline, t fe = 5 nm, and 7 nm.