The characterization of diamond single crystal growing along (100) after annealing treatment under high pressure and high temperature

Diamond has many desirable properties. In this study, temperature gradient method was used to prepare a series of type Ib diamond single crystals, which were processed again to obtain and characterize Type IaA diamonds with even more desirable properties. Before annealing, Fourier-transformed infra-red(FTIR) spectra of diamond showed peaks at 1130 cm−1 and 1344 cm−1; After annealing, the peak at 1282 cm−1 was appeared in FTIR spectra of diamonds This data indicated that the isolated nitrogen in diamond aggregated after high-pressure and high-temperature (HPHT) method annealing experiment. Moreover, photoluminescence (PL) spectra suggested that no nitrogen-related color centers existed in the diamond before annealing. In contrast, after annealing, a peak at 637 nm appeared in the PL spectra, indicating the appearance of NV−colors centers type Ib diamond post-annealing. The experimental results show that type Ib diamond crystals can be decolorized after 60 min of annealing under 7 GPa and 1850 °C, which makes part of the area transparent. Under 7 GPa and 2100 °C, type Ib diamond crystals can produce NV color center when annealed for 3 min. With increasing annealing temperature and prolonged annealing duration, the density and size of etch pits on the crystal surface escalated. Therefore, this study provides a guideline for the decolorization of diamonds by HPHT annealing. Moreover, this study also reports a method to change the crystal type and obtain NV color centers under ultra-high-temperature annealing conditions of 7 GPa pressure and 2100 °C temperature, which can be applied to develop quantum materials.