Synthesis and resistive switching performance of lead-free double perovskite Cs2AgBiBr6 films

In recent years, the lead-free double perovskite Cs2AgBiBr6 has emerged as an appealing alternative to lead-based perovskites due to its nontoxicity and long-term stability. In this study, we employed methyl acetate as an antisolvent and prepared high-quality Cs2AgBiBr6 films by a facile one-step spin-coating method. The prepared films exhibited excellent crystallinity with densely packed crystal grains. The root mean square roughness and average roughness of the obtained Cs2AgBiBr6 perovskite films were 6.69 and 5.43 nm, respectively. Furthermore, the memory device based on the Cs2AgBiBr6 perovskite films exhibited uniform and repeatable bipolar resistive switching performance with an ON/OFF ratio of 15, an endurance of 80 cycles, and a retention time of 104 s. This work showcases a simple and convenient one-step spin-coating method for depositing high-quality Cs2AgBiBr6 thin films while highlighting their potential application in resistive switching memories based on lead-free double perovskites.