Abstract The emergence of all‐inorganic perovskite CsPbBr 3 has ignited significant interest in optoelectronic devices, However, CsPbBr 3 thin film‐based photodetectors face performance limitations due to grain boundaries and defect density. To address these challenges, we introduce a novel type II heterojunction photodetector utilizing CsPbBr 3 microwires (MWs) and CdS nanoribbons (NBs). Remarkably, this photodetector exhibits exceptional characteristics: a high on/off current ratio (1.07 × 10 5 ), a responsivity of up to 1.35 × 10 4 A·W −1 , specific detectivity of 5.94 × 10 15 Jones, external quantum efficiency of 2.83 × 10 4 % and rapid response/recovery time (400 μs/3 ms). These superior performances stem from the exceptional crystalline quality of CsPbBr 3 MWs and CdS NBs, coupled with the establishment of a type II band alignment at their interface. This configuration enables efficient carrier separation while suppressing recombination. Importantly, 1D CsPbBr 3 MW/CdS NB heterojunction photodetectors demonstrate reliable imaging capabilities under visible light illumination. Our findings present an innovative solution for high‐performance perovskite‐based photodetectors, holding promise for future commercial applications.