电容器
逐次逼近ADC
CMOS芯片
有效位数
电子工程
功勋
电气工程
带宽(计算)
去耦电容器
计算机科学
工程类
材料科学
电压
电信
光电子学
作者
Mingchao Jian,JiWei Zheng,XiangJian Kong,Meng Yuan,Chunhua Zhang,ChunBing Guo,Bo Sun
出处
期刊:
日期:2022-09-23
卷期号:129: 105588-105588
被引量:13
标识
DOI:10.1016/j.mejo.2022.105588
摘要
A low-power 12-bit 10 MS/s successive approximation register (SAR) analog-to-digital converter (ADC) with a reversible VCM-based capacitor (RVC) switching scheme is presented in this paper. The switching power consumption of the proposed scheme is 95% and 62.3% lower than that of conventional and VCM-based capacitor switching schemes, respectively. The use of a segmented DAC structure reduces the size of the largest capacitor from 211 unit capacitors in the conventional capacitor array to 24 unit capacitors. This 75% reduction in the capacitor area decreases the settling time of the DAC capacitor network as well as requirements on the bandwidth and driving capability of the reference source VREF. An ADC prototype with an active area of 0.218 mm2is fabricated in 180-nm 1P6M CMOS process. With supply of 1.8 V and sampling rate of 10 MS/s, the ADC achieves a signal-to-noise and distortion ratio (SNDR) of 58.9 dB and consumes power of 0.36 mW, yielding a figure of merit (FOM) of 59.8fJ/conversion-step.
科研通智能强力驱动
Strongly Powered by AbleSci AI