响应度
光电探测器
光电子学
材料科学
光电二极管
红外线的
带隙
石墨烯
砷化镓
半导体
砷化铟镓
暗电流
硅
电子迁移率
砷化铟
光学
纳米技术
物理
作者
Emma P. Mukhokosi,Gollakota Venkata Sai Manohar,Tadaaki Nagao,S. B. Krupanidhi,Karuna Kar Nanda
出处
期刊:Micromachines
[MDPI AG]
日期:2020-07-31
卷期号:11 (8): 750-750
被引量:18
摘要
While band gap and absorption coefficients are intrinsic properties of a material and determine its spectral range, response time is mainly controlled by the architecture of the device and electron/hole mobility. Further, 2D-layered materials such as transition metal dichalogenides (TMDCs) possess inherent and intriguing properties such as a layer-dependent band gap and are envisaged as alternative materials to replace conventional silicon (Si) and indium gallium arsenide (InGaAs) infrared photodetectors. The most researched 2D material is graphene with a response time between 50 and 100 ps and a responsivity of <10 mA/W across all wavelengths. Conventional Si photodiodes have a response time of about 50 ps with maximum responsivity of about 500 mA/W at 880 nm. Although the responsivity of TMDCs can reach beyond 104 A/W, response times fall short by 3–6 orders of magnitude compared to graphene, commercial Si, and InGaAs photodiodes. Slow response times limit their application in devices requiring high frequency. Here, we highlight some of the recent developments made with visible and near-infrared photodetectors based on two dimensional SnSe2 and MoS2 materials and their performance with the main emphasis on the role played by the mobility of the constituency semiconductors to response/recovery times associated with the hetero-structures.
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