In-situ measurement of indium segregation in InAs/GaAs submonolayer quantum dots

Reflection high-energy electron diffraction was used to determine In segregation during the growth of InAs/GaAs submonolayer quantum dots by molecular beam epitaxy. The segregation coefficient R was estimated for the usual growth conditions, starting from a c4 × 4 reconstruction of the GaAs(001) surface, as well as for another set of very different growth parameters, yielding an initial 2 × 4 surface reconstruction that might provide quantum dots of better quality.