Field-stop layer optimization for 1200V FS IGBT operating at 200˚C

This paper is concerned with design considerations for enabling the operation of Field-Stop Insulated Gate Bipolar Transistors (FS IGBTs) at 200 C. It is found that through a careful optimization of the Field-Stop layer doping profile the device has a low leakage current and delivers a favorable tradeoff between the on-state voltage (V _on ) and turn-off loss (E _off ). An investigation of the adverse effects of increasing the junction temperature on the temperature-dependent properties of the FS IGBTs is also discussed herein.