炼金术中的太阳
串联
饱和电流
载流子寿命
材料科学
光电子学
硅
饱和(图论)
物理
电压
复合材料
量子力学
组合数学
数学
作者
Bhumika Chhabra,Sean Jacobs,Christiana B. Honsberg
标识
DOI:10.1109/wcpec.2006.279575
摘要
Quasi steady state photoconductance (QSS-PC) and the "Suns- Voc" technique have been extensively used for characterizing silicon solar cells. QSS-PC has been used to determine the minority carrier lifetime, saturation current and surface recombination velocity. In this paper, we use both techniques to measure III-V tandem solar cells and III-V material, demonstrating the utility of the Suns- Voc for tandem devices and the ability to apply the QSS-PC measurements to the III-V materials, including GaAs and GaN. PC1D modeling is used to explain the experimental results.
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