极紫外光刻
光刻胶
抵抗
材料科学
极端紫外线
平版印刷术
光刻
光电子学
结晶
纳米光刻
多重图案
下一代光刻
紫外线
波长
X射线光刻
纳米技术
光学
制作
电子束光刻
激光器
化学工程
病理
工程类
物理
医学
替代医学
图层(电子)
作者
Anuja De Silva,Drew C. Forman,Christopher K. Ober
摘要
The semiconductor industry requires new photoresist materials in order to operate in the sub-50 nm regime. In addition to meeting the resolution and line edge roughness requirements, these photoresists must be transparent in the extreme ultraviolet and have excellent etch resistance characteristics. This report highlights several small molecule molecular glasses, which are low molecular weight organic materials that demonstrate a glass transition temperature as well as a low tendency towards crystallization, with new architectures designed for EUV lithography. Transparency at the EUV wavelength of 13.4 nm may be enhanced by incorporation of low absorbing atoms such as C, H and Si. Rigid, asymmetric structures have been included in order to reduce crystallization and increase Tg. Studying the effects of these design characteristics across a continuum of architectures enables greater insight into the factors affecting photoresist performance.
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