材料科学
响应度
光电探测器
光电子学
光活性层
暗电流
吸收(声学)
比探测率
活动层
光电二极管
有机半导体
标度系数
有机电子学
光电流
图层(电子)
接受者
可伸缩电子设备
纳米技术
聚合物
有机太阳能电池
聚合物太阳能电池
载流子
光通信
数码产品
柔性电子器件
作者
Hyesu Jeon,Jongmin Oh,Jin‐Woo Lee,Hyeong Ju Eun,Won Jung Kang,Du Hyeon Ryu,Hang Ken Lee,C Wang,Hyunbum Kang,Taek‐Soo Kim,Junsu Kim,Seungjin Lee,Bumjoon J. Kim
标识
DOI:10.1002/adma.202514951
摘要
Intrinsically stretchable organic photodetectors (IS-OPDs) are essential for next-generation wearable electronics requiring both mechanical durability and reliable optical sensing. However, current performance of IS-OPDs degrades under tensile strain due to inherent trade-offs between mechanical and optoelectronic properties in photoactive layers. Here, we report the development of the IS-OPD that exhibits strain-induced detectivity (D) enhancement, enabled by designing mechanically robust and efficient bilayer-type photoactive architecture (EBL-D). Specifically, we incorporate percolated polymer donor (PD):elastomer networks at the bottom layer, which simultaneously offer excellent stretchability and efficient charge transport. Subsequently, we deposit a small-molecule acceptor layer atop the PD:elastomer layer, expanding the optical absorption range into the near-infrared region while minimizing undesirable charge recombination. The resulting IS-OPD based on the EBL-D architecture maintains high responsivity and effectively suppresses dark current under strain. Consequently, the device exhibits 1.5-fold improvement in specific detectivity from 1.9 × 1013 to 2.8 × 1013 Jones at λ = 860 nm under 75% strain, corresponding to a 1.3-fold increase in D after accounting for the enlarged photoactive area. To the best of our knowledge, this work is the first to experimentally demonstrate strain-induced D enhancement in stretchable OPDs.
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