神经形态工程学
记忆电阻器
突触可塑性
材料科学
计算机科学
长时程增强
纳米技术
人工智能
桥接(联网)
变质塑性
钙钛矿(结构)
神经科学
光子学
突触重量
突触后电位
可塑性
人工神经网络
电压
无监督学习
趋同(经济学)
非突触性可塑性
生物系统
任务(项目管理)
作者
Mostafa Shooshtari,So-Yeon Kim,Saeideh Pahlavan,Teresa Serrano-Gotarredona,Juan Bisquert,B. Linares-Barranco
标识
DOI:10.1021/acsami.5c21545
摘要
Recent advances in neuromorphic engineering have sparked a convergence between nanotechnology and neuroscience, where emerging devices such as memristors are being explored to replicate fundamental learning mechanisms observed in the brain. One such mechanism, spike-timing-dependent plasticity (STDP), encodes synaptic changes based on the precise timing between pre- and postsynaptic spikes, and has been widely adopted in machine intelligence and computational neuroscience. In this work, we demonstrate that a halide perovskite memristor (Cs3Bi2I6Br3) can effectively simulate biologically plausible STDP dynamics. We fabricate and characterize the MHP-based device, and develop a dynamic physical model capturing its voltage- and history-dependent switching behavior. Using biologically inspired biphasic voltage pulses, the model replicates classic STDP characteristics including long-term potentiation (LTP), long-term depression (LTD), and the canonical asymmetric learning window. Further analysis shows that the memristor supports advanced features such as triplet-STDP and synaptic memory consolidation. Importantly, the STDP behavior remains stable across 100 independent trials with biologically realistic voltage noise, exhibiting less than 0.03% variation in synaptic weight. These results suggest that the inherent physical dynamics of halide perovskites enable bioinspired learning without external programming or algorithmic supervision. By bridging molecular-scale materials physics with spike-based computation, our findings lay the groundwork for implementing scalable, low-power, and noise-tolerant synaptic learning in next-generation neuromorphic computing systems.
科研通智能强力驱动
Strongly Powered by AbleSci AI