缩放比例
薄膜
计算机科学
过程(计算)
GSM演进的增强数据速率
工程物理
新兴技术
材料科学
沉积(地质)
纳米技术
电气工程
电子工程
工程类
电信
地质学
数学
操作系统
古生物学
沉积物
几何学
作者
Robert D. Clark,Kandabara Tapily,Kuo-Hui Yu,Takahiro Hakamata,Steven Consiglio,David O’Meara,Cory S. Wajda,Jeffrey Smith,Gert J. Leusink
标识
DOI:10.1109/edtm.2018.8421524
摘要
In this paper we present an overview and examples of thin films processing technologies for future generations of leading edge semiconductor devices. We introduce the main driving forces affecting future thin film deposition and etch technologies including the push for 3D (vertical) power, performance and area scaling. We discuss new thin films processes on the near term horizon that enable future devices, improved contacts, scaled 3D interconnects, and advanced patterning technologies followed by a future outlook for scaling.
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