CVD Growth of Graphene by Exfoliated Graphene Seeds on SiO 2 Substrate

Graphene’s unique mechanical, thermal and electrical properties make it an important material for research consideration. Additionally, the covalently bonded carbon atoms in graphene have potential applications in future technologies. Different methods have been proposed to synthesize graphene, but chemical vapor deposition (CVD) is the most promising. Chemical vapor deposition is recognized as low cost and is the most economical method. In this research, the growth of graphene on exfoliated graphene by a chemical vapor deposition method on SiO2 substrates has been shown as having a good potential to produce vertical stacking of graphene layers on top of exfoliated graphene seeds’ flakes. This research will demonstrate experimental procedures, analytical techniques and supportive evidence to achieve vertical stacking of graphene-grown layers, on top of flakes after using chemical vapor deposition.