Analytical surface-potential compact model for amorphous-IGZO thin-film transistors

We present a compact model based on surface potential for amorphous-InGaZnO thin-film transistors, built using multiple trapping and detrapping theory. Using this model, the surface potential can be calculated analytically, so it can be used to rapidly determine the transistor characteristics during circuit simulation. We verified the proposed model using both numerical simulation and experiment, showing that the model is accurate over a wide range of operation regions. The model also provides a physics-based consistent description of DC and AC device characteristics and enables accurate design of amorphous InGaZnO thin-film transistor circuits.