材料科学
场效应晶体管
光电子学
晶体管
电子迁移率
肖特基势垒
制作
声子散射
肖特基二极管
散射
凝聚态物理
声子
电阻率和电导率
电气工程
光学
物理
电压
工程类
医学
替代医学
二极管
病理
作者
Stefano Larentis,Babak Fallahazad,Emanuel Tutuc
摘要
We report the fabrication of back-gated field-effect transistors (FETs) using ultra-thin, mechanically exfoliated MoSe2 flakes. The MoSe2 FETs are n-type and possess a high gate modulation, with On/Off ratios larger than 106. The devices show asymmetric characteristics upon swapping the source and drain, a finding explained by the presence of Schottky barriers at the metal contact/MoSe2 interface. Using four-point, back-gated devices, we measure the intrinsic conductivity and mobility of MoSe2 as a function of gate bias, and temperature. Samples with a room temperature mobility of ∼ 50 cm2/V·s show a strong temperature dependence, suggesting phonons are a dominant scattering mechanism.
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