Application of KrCI excilamp for cleaning GaAs surfaces using atomic hydrogen

Novel single block process facility including UV excilamp and sources of atomic hydrogen is described. Circular sealed-off KrCl* excilamp emitting two intensive bands at 195 and 222 nm was used. The source of atomic hydrogen on the base of reflecting Penning arc discharge was placed in line with the lamp. Semiconducting structures were treated in an expanding effusion jet of atomic hydrogen. The possibility to realize the process of cleaning GaAs surface under joint action of atomic hydrogen and UV radiation has been investigated. Effect of UV radiation on the rate of removing oxide layer is found at low temperature (18 - 100 degree(s)C). The mechanism providing an explanation for this event is suggested. The possibility to realize GaAs surface cleaning using successive performing the procedures of the surface treatment by atomic hydrogen, its oxidation with UV- stimulation and additional treatment by atomic hydrogen was also studied. The sources of atomic hydrogen and UV radiation developed allows to improve cleaning control and provides a way of producing the surface with specified properties.