Improvement of Hump Phenomenon of Thin-Film Transistor by SiN<SUB>X</SUB> Film

It is clarified that the SiNX film with a thickness of 1.7 nm, which was formed at the interface between the poly-Si source/drain and Al layer, suppresses the hump phenomenon of TFT with a channel length of 10 μm. The mechanism of the hump suppression by this structure is discussed. It is thought that the fixed charge in the SiNX film suppresses the formation of the parasitic channel in the poly-Si edge by the Coulomb repulsion.