退火(玻璃)
材料科学
扩散阻挡层
钌
透射电子显微镜
无定形固体
铜
高分辨率透射电子显微镜
薄膜
电镀
硅
微观结构
分析化学(期刊)
化学工程
纳米技术
结晶学
冶金
化学
工程类
催化作用
生物化学
色谱法
图层(电子)
作者
Tiruchirapalli Arunagiri,Y. Zhang,Oliver Chyan,M. El-Bouanani,M. J. Kim,Kuei‐Hsien Chen,Chun-Mu Wu,Li‐Chyong Chen
摘要
Interfacial stability of electroplated copper on a 5nm ruthenium film supported by silicon, Cu∕(5nmRu)∕Si, was investigated using Rutherford backscattering and high-resolution analytical electron microscopy. Transmission electron microscopy (TEM) imaging shows that a 5nm Ru film is amorphous in contrast to the columnar microstructures of thicker films (20nm). Direct Cu plating on a 5nm Ru film yielded a homogeneous Cu film with over 90% plating efficiency. It is demonstrated that 5nm Ru can function as a directly plateable Cu diffusion barrier up to at least 300°C vacuum anneal. TEM reveals an interlayer between Ru∕Si, which expands at the expense of Ru upon annealing. Electron energy loss spectroscopy analyses show no oxygen (O) across the Cu∕(5nmRu)∕Si interfaces, thereby indicating that the interlayer is ruthenium silicide (RuxSiy). This silicidation is mainly attributed to the failure of the ultrathin Ru barrier at the higher annealing temperature.
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