记忆电阻器
电容器
神经形态工程学
电容感应
电阻随机存取存储器
拓扑(电路)
电气工程
电压
计算机科学
物理
人工智能
工程类
人工神经网络
作者
Massimiliano Di Ventra,Yuriy V. Pershin,Leon O. Chua
出处
期刊:Proceedings of the IEEE
[Institute of Electrical and Electronics Engineers]
日期:2009-09-22
卷期号:97 (10): 1717-1724
被引量:1172
标识
DOI:10.1109/jproc.2009.2021077
摘要
We extend the notion of memristive systems to capacitive and inductive elements, namely, capacitors and inductors whose properties depend on the state and history of the system. All these elements typically show pinched hysteretic loops in the two constitutive variables that define them: current-voltage for the memristor, charge-voltage for the memcapacitor, and current-flux for the meminductor . We argue that these devices are common at the nanoscale, where the dynamical properties of electrons and ions are likely to depend on the history of the system, at least within certain time scales. These elements and their combination in circuits open up new functionalities in electronics and are likely to find applications in neuromorphic devices to simulate learning, adaptive, and spontaneous behavior.
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