成核
材料科学
合金
化学气相沉积
氮化硼
微晶
电介质
Crystal(编程语言)
石墨烯
六方氮化硼
图层(电子)
硼
纳米技术
单晶
化学工程
结晶学
冶金
光电子学
化学
有机化学
计算机科学
工程类
程序设计语言
作者
Guangyuan Lu,Tianru Wu,Qinghong Yuan,Huishan Wang,Haomin Wang,Feng Ding,Xiaoming Xie,Mianheng Jiang
摘要
Hexagonal boron nitride (h-BN) has attracted significant attention because of its superior properties as well as its potential as an ideal dielectric layer for graphene-based devices. The h-BN films obtained via chemical vapour deposition in earlier reports are always polycrystalline with small grains because of high nucleation density on substrates. Here we report the successful synthesis of large single-crystal h-BN grains on rational designed Cu-Ni alloy foils. It is found that the nucleation density can be greatly reduced to 60 per mm(2) by optimizing Ni ratio in substrates. The strategy enables the growth of single-crystal h-BN grains up to 7,500 μm(2), approximately two orders larger than that in previous reports. This work not only provides valuable information for understanding h-BN nucleation and growth mechanisms, but also gives an effective alternative to exfoliated h-BN as a high-quality dielectric layer for large-scale nanoelectronic applications.
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