Improved Thermoelectric Performance of In‐Doped Quaternary Cu2MnSnSe4 Alloys

Recently, Cu 2 MnSnSe 4 alloys and similar compounds have drawn immense attention due to their low intrinsic thermal conductivity. However, their inferior electrical properties hinder their industrial applications. Herein, Cu 2 MnSn 1− x In x Se 4 alloys are successfully synthesized and the thermoelectric transport properties are investigated. The results reveal that In doping significantly enhances the electrical properties by reducing electrical resistivity by 4.3 times at maximum temperature. As a consequence, the power factor value is enhanced to 665 μW K −2 m −1 for the sample with 7.5% In concentration which is about 2.2 times higher than the pristine sample. Eventually improved dimensionless figure of merit of 0.33 has been obtained for 5% sample.