Status and outlook of emerging nonvolatile memory technologies
作者
Georg Müller,Thomas D. Happ,M. Kund,G.Y. Lee,N. Nagel,Recai Sezi
标识
DOI:10.1109/iedm.2004.1419223
摘要
This paper reviews the concept, status and challenges of emerging nonvolatile memory technologies. The technologies that are discussed and compared to state of the art flash technology are the conductive bridging RAM (CBRAM), the ferro-electric RAM (FeRAM), the magneto-resistive RAM (MRAM), the organic RAM (ORAM) and the phase change RAM (PCRAM).