Experimental study of the influence of the CdZnTe substrate thickness on the response of infrared HgCdTe photodetectors under proton irradiation

光电二极管 暗电流 碲化镉光电 响应度 光电导性 基质(水族馆)
作者
Thibault Pichon,O. Boulade,Salima Mouzali,P. Mulet,Simone De Camillis,Charbel Koumeir,Jean‐Louis Santailler,G. Badano,O. Gravrand,O. Limousin
出处
期刊:Society of Photo-Optical Instrumentation Engineers (SPIE) Conference Series 被引量:2
标识
DOI:10.1117/12.2562142
摘要

Experimental study of the influence of the CdZnTe substrate thickness on the response of IR detectors under irradiation has been performed. Two detectors, with different substrate thickness 800 μm and 50 μm, were submitted to low flux 62 MeV proton irradiation.Images acquired under irradiation were analyzed. Whereas the detector with 800 μm substrate thickness has shown background signal increase under irradiation, the detector with the substrate partially removed has not shown any background signal elevation. The elevation of the background signal under irradiation in the detector with intact substrate is attributed to the large extension of one transient event as reveal by the derivation of one transient event. The results of the irradiation campaign are further compared to simulations. This comparison shows very good agreement and highlights the role of emission of low energy photons inside the substrate which are in turn detected by the light sensitive layer.
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