Vapor Transport Deposition of Highly Efficient Sb2(S,Se)3 Solar Cells via Controllable Orientation Growth

Abstract The vapor transport deposition of quasi‐one‐dimensional antimony selenosulfide (Sb 2 (S,Se) 3 ) has recently attracted increasing research interest for the inexpensive, high‐throughput production of thin film photovoltaic devices. Further improvements in Sb 2 (S,Se) 3 solar cell performance urgently require the identification of processing strategies to control the orientation, however the growth mechanism of high quality absorbers is still not completely clear. Herein, a facile and general vapor transport deposition approach to precisely control the growth of large‐grained dense Sb 2 (S,Se) 3 films with good crystallization and preferred orientation via the source vapor speed is utilized. It is found that defect activation energy rather than the defect concentration plays a decisive role in the Sb 2 (S,Se) 3 photovoltaic performance. Admittance spectroscopy analysis is used to obtain efficient Sb 2 (S,Se) 3 solar cells. By employing dual‐source coordinations to optimize the absorber layer a power conversion efficiency of 8.17% is obtained which is the highest efficiency for Sb 2 (S,Se) 3 solar cells fabricated by vapor transport technology. This study suggests that there are other opportunities for gaining deeper a understanding of the defect physics and carrier recombination mechanisms in other highly oriented low‐dimensional materials to achieve improved device performance.