电容
电气工程
像素
平板显示器
帧(网络)
电容器
计算机科学
联轴节(管道)
电压
电子工程
电极
材料科学
工程类
电信
物理化学
计算机视觉
冶金
化学
作者
Ding Ai-yu,Liu Hong,Wei Li,Jian Sun,Xu Jing-Yi,Jianyun Xie
摘要
As Mobile's refresh rate continues to increase, so do the technical difficulties associated with high refresh rates, one of the most important parameters affecting refresh rates is the charging rate. The increase in refresh rate (frame) will lead to a reduction in charging time and a decrease in the charging rate of pixels, resulting in graphics that ultimately do not achieve the desired display effect; in addition, the increase in refresh rate will also bring about problems such as increased VCOM coupling, which will affect the end‐use experience of the product. The article introduces three options to improve the charging rate from the design and process perspective: 1) increase the gate drive circuit unit (GOA) to enhance the driving capability of the pixel TFT gate and improve the charging rate; 2) increase the W/L and gate drive voltage values of the TFT tube in the panel to increase the open state current according to the calculation formula of the TFT tube open state current; 3) use metal materials with lower square resistance 3) Use metal materials with lower square resistance to reduce the wire resistance and improve the efficiency of signal transmission. At the same time, the thickness of the insulation layer between the Common electrode and the Pixel electrode is increased to reduce the capacitance of the pixel capacitor (Cst), which effectively reduces the coupling value and improves the VCOM coupling. After the above theoretical model calculations and the verification of the introduction of actual products show that each improvement scheme can effectively improve the charging rate of high frequency displays and break through the high frequency technology barrier. The results of this paper also provide an important reference value for the design and production of high refresh rate screens in the future.
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