镓
氧化镓
外延
材料科学
氧化物
薄膜
Crystal(编程语言)
结晶学
纳米技术
矿物学
化学
冶金
计算机科学
程序设计语言
图层(电子)
标识
DOI:10.1002/3527600434.eap848
摘要
Abstract In this article, we review the growth of various phases of gallium oxides (Ga 2 O 3 ). There are five polymorphs of Ga 2 O 3 , α, β, γ, δ, and ϵ (or κ), of which β‐gallia is the most thermodynamically stable one. In the past decade, remarkable advancements in producing β‐Ga 2 O 3 bulk substrates have been made. At present, 4‐inch β‐Ga 2 O 3 substrates are commercially available. The other phases of Ga 2 O 3 are less thermally stable; however, the material properties of different crystal structures suggest their potential for a broad range of applications. In order to better understand the characteristics of various phases of Ga 2 O 3 , growth methods for bulk and epitaxial thin films of Ga 2 O 3 and structural properties are reviewed herein.
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