Synthesis, Characterization and Optoelectronic device application of ZnO nano structure

Abstract A clear ZnO nanowire was obtained using the Pulse laser deposition technique on a silicon and quartz substrate. Thermal oxidation at 650 °C for 1 hour was used, employing conventional tube furnace. The structural properties ensure the formation of quantizing ZnO. The electrical properties of prepared ZnO NWs/Si films reveal a good rectification with maximum optical Responsivity in the UV region reach to 0.3A W.