Hot carrier induced TDDB in HV MOS: Lifetime model and extrapolation to use conditions

In this paper we report on a lifetime extrapolation model for hot carrier induced time dependent dielectric breakdown (HCI-TDDB) in HV MOS devices. The proposed lifetime model is based on findings from literature, supplemented with new experimental data on HV pMOS devices. The methodology to make accurate lifetime extrapolations towards use conditions is also discussed.