电容器
电子工程
CMOS芯片
计算机科学
滤波电容器
动态范围
去耦电容器
噪音(视频)
信噪比(成像)
匹配(统计)
失真(音乐)
逐次逼近ADC
电容
数据转换
尺寸标注
线性
校准
开关电容器
电气工程
电压
可变电容器
寄生提取
信号(编程语言)
转换器
工程类
信号处理
滤波器(信号处理)
带宽(计算)
塑造
抖动
航程(航空)
比较器
采样(信号处理)
混合信号集成电路
作者
William Webb,Rares Bodnar,Cornelius H. de Groot
出处
期刊:IEEE Transactions on Circuits and Systems I-regular Papers
[Institute of Electrical and Electronics Engineers]
日期:2026-01-01
卷期号:: 1-13
标识
DOI:10.1109/tcsi.2026.3664777
摘要
Capacitor matching in large digital to analog converter (DAC) arrays is a key limitation for the performance of precision successive approximation register (SAR) analog to digital converter (ADC) linearity, signal to noise ratio (SNR) and signal to noise and distortion ratio (SNDR). Costly techniques such as noise-shaping, calibration and dynamic element matching techniques are often used to ensure the required linearity. Currently available matching data for capacitor models are not sufficient for the estimation of the performance of capacitive-DACs having a dynamic range above 5 bit or in excess of 32 unit elements. To address these limitations, an in-depth analysis of the impact of the geometry of lateral metal-oxide-metal (MOM) capacitors on matching errors is presented in this paper, based on the study of a 256-element charge-redistribution DAC. The impacts of capacitor finger length, width, and spacing are individually considered and characterised over a sample of 96 die, from 3 different wafers in a 40nm CMOS process. The systematic and random mismatch relationships are decorrelated and considered in isolation. Observed trends and dependencies are presented, and used for the optimisation of dimensioning and layout in a capacitor structure found to achieve >4x improvement compared with typical standard-library cell arrays. The optimised and parameterised DAC arrays are employed within a scaled-reference SAR ADC, achieving 99.3 dB SNR figure (uncalibrated) due to the improved structures.
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