Quantum Conductance in MoO3/TiO2 Heterojunction Memristors: Crafting Controlled Analog-to-Digital Transition for Multilevel Memory Applications

Functional materials showing quantized conductance during resistive switching are needed for the development of future technologies based on quantum phenomena. The precise control of quantum jumps during conductance is required to achieve such technologies. Here, we report a solution-processed bilayer Au/MoO3/TiO2/FTO resistive switching device showing an excellent memory window and long endurance (∼5000 cycles). Process-induced oxygen vacancies form the conduction filament, resulting in abrupt jumps in the conductance. By controlling the optimized scan rate, a transition from analog to digital switching is achieved. The SET process can be controlled by means of bias scan range and scan speed, exhibiting quantized conductance levels. Histogram of the quantized conductance reveals the SET process proceeds with nG0 jumps (∼n = 1 – 6). Our results show that such bilayer systems can be utilized for next-generation multibit storage devices.