放大器
材料科学
光电子学
电气工程
光学
物理
工程类
CMOS芯片
作者
Fengchen Zhang,Geyang Wang,Wenlong Tian,Yu Yang,Yi Shan Wang,Zhiyi Wei,Jiangfeng Zhu
标识
DOI:10.1109/cleo/europe-eqec65582.2025.11109137
摘要
High energy femtosecond laser systems provide the experimental basis for pumping variety of optical processes, ranging from high harmonics, terahertz science, and optical parametric amplification. [1], [2]. Yb:CaGdAlO4, serving as a host laser crystal, has emerged as an especially suitable option for high energy, short pulse amplifier. It features a remarkably smooth and broad gain bandwidth of 70 nm with a flat-top shape for cr-polarization[3]. This unique characteristic not only enables a reduction in gain narrowing effects but also contributes to high energy output. In this paper, we reported a pulsed pump, two-stage, dual-pass Yb:CaGdAlO4amplifier. The front seed is a 1 kHz, 6.5 mJ Yb:CaGdAlO4dual-crystal regenerative amplifier. In the first stage, a two-pass amplifier is employed to suppress self-oscillation, The mode diameters of the seed and the pump are both 540 μm. In the case of the double-pass configuration without pumping, the seed laser has 5.56 mJ remaining after reabsorption loss. At a pump power of 250 W with a pump duty cycle of approximately 42%, it has been achieved that the pulse energy reaches up to 9.9 mJ, the laser beam ellipse is greater than 0.9. In the second stage, the mode diameter of the seed and pump laser on the Yb:CaGdAlO4crystal are 600 μm and 540 μm. It is also pumped by a quasi-continuous pump with a pump duty cycle of approximately 42%. This pumping mechanism offers sufficient amplification. As a result, when seeded with the 7 -mJ output from the first stage, the amplifier can extract 10.8 mJ of energy with pump power at 250 W. The spectrum of 10.8 mJ was centered at 1039 nm and show a full width at half maximum of 6.2 nm. Using a double-pass, Single-grating compressor, the pulses can be compressed to 310 fs.
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