异质结
材料科学
光电子学
电介质
石墨
吸收(声学)
微波食品加热
极化(电化学)
介电损耗
锌
氮化物
电导率
纳米技术
复合材料
图层(电子)
冶金
化学
计算机科学
电信
物理化学
作者
Cong Chen,Jiayuan Wang,Haitao Dong,Wen Chen,Kun Zhou
标识
DOI:10.1016/j.jallcom.2022.167723
摘要
Development of a thinner, wideband electromagnetic absorbing material that aims to address the growing electromagnetic pollution has becoming a hot topic. Herein, a heterojunction material consisting with 2-dimensional g-C3N4 and hierarchical flower shaped ZnO has been produced by a simple method, which exhibits the superior dielectric response ability. In details, the formed heterojunction with crossed energy structure benefits to the conductivity loss ability. Moreover, the as-prepared g-C3N4/ZnO with controlled interfaces possess the desirable interfacial polarization relaxation behavior, which may additional contribution for the dielectric loss. Owing to the improved conductive loss an interface polarization, the ultimately sample has a broad band EM absorption ability, with an effective absorption region of 5.3 GHz under a thin matched thickness of 1.5 mm. The method for designing of heterojunction-based material can be desirable candidate for the high-performance EM absorber.
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