Synthesis and characterizations of polystyrene materials with low dielectric constant and low dielectric loss at high frequency

Abstract In this article, a facile and efficient approach to the modification of polystyrene (PS) materials with low dielectric properties at high frequency is reported. A series of N ‐acetoxy amide (AA)‐containing polystyrenes (PSAAs) synthesized by free‐radical polymerization can be transformed into NCO‐containing polymers (rPSAAs) via Lossen rearrangement reaction of the AA group. The modified PS materials were then obtained by reacting the rPSAAs with hydroxyl‐terminated poly(phenylene oxide) (PPOD), polybutadiene, and amino‐terminated polysiloxane, respectively. The thermal stability, mechanical, and dielectric properties of PPOD‐modified PS materials were improved with increase of PPOD content. The PPOD (20 wt%)‐modified PS had a dielectric constant of 2.22 and dissipation factor of 1.65 × 10 −3 at 10 GHz. This work provides an easy and effective method to prepare high performance modified PS materials by introducing poly(phenylene oxide), which could meet the requirement of new‐generation communication technology.