材料科学
铁电性
光伏
堆积
极化(电化学)
压电响应力显微镜
光电子学
范德瓦尔斯力
凝聚态物理
基质(水族馆)
纳米技术
电介质
光伏系统
化学
物理化学
物理
地质学
海洋学
有机化学
生物
分子
生态学
作者
Yu‐Cheng Chang,Ryo Nanae,Sota Kitamura,Takuya Nishimura,Haonan Wang,Yubei Xiang,Keisuke Shinokita,Kazunari Matsuda,Takashi Taniguchi,Kenji Watanabe,Kosuke Nagashio
标识
DOI:10.1002/adma.202301172
摘要
Abstract The shift‐current photovoltaics of group‐IV monochalcogenides has been predicted to be comparable to those of state‐of‐the‐art Si‐based solar cells. However, its exploration has been prevented from the centrosymmetric layer stacking in the thermodynamically stable bulk crystal. Herein, the non‐centrosymmetric layer stacking of tin sulfide (SnS) is stabilized in the bottom regions of SnS crystals grown on a van der Waals substrate by physical vapor deposition and the shift current of SnS, by combining the polarization angle dependence and circular photogalvanic effect, is demonstrated. Furthermore, 180° ferroelectric domains in SnS are verified through both piezoresponse force microscopy and shift‐current mapping techniques. Based on these results, an atomic model of the ferroelectric domain boundary is proposed. The direct observation of shift current and ferroelectric domains reported herein paves a new path for future studies on shift‐current photovoltaics.
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