Piezoelectricity in wide bandgap semiconductor 2D crystal GaN nanosheets

2D GaN nanosheets can grow on Ga/W liquid-phase substrates by CVD. 700 nm-thick GaN nanosheets have a piezoelectric constant of d eff33 = 1.53 ± 0.21 pm V −1 and possess the capability to effectively modulate the Schottky barrier.