C10-DNTT Organic Thin Film Transistors (OTFTs) Based on 4-Fluorostyrene Incorporated P(MMA-co-GMA) Gate Dielectric Layer

High performance polymeric dielectrics are of critical importance for obtaining high carrier mobility and realizing low operating voltage in OTFTs. In this work, copolymers poly(methyl methacrylate) containing 4-fluorostyrene monomer were used as insulating layers for OTFTs devices of C10-DNTT. With the increase of 4-fluorostyrene, the threshold voltage shifted positively, and the random copolymer poly(4-fluorostyrene–methyl methacrylate–glycidyl methacrylate)-5 (P(FSt-co-MMA-co-GMA)-5) exhibited a threshold voltage lower to 1.8 V, a hole mobility of up to 0.518 cm2 V–1 s–1, and a dielectric constant value of 5.66. XRD spectra reveal that C10-DNTT has the best morphology at (001) peak as the dielectric copolymer contains 5% 4-fluorostyrene monomer.