Phase formation of nanosized InGaZnO4 obtained by the sol-gel method with different chelating agents

The production of nano-sized semiconductor oxide materials, such as indium-gallium-zinc oxide (IGZO), will make it possible to use it for the transistors manufacture using printing methods.The sol-gel method is one of the widely known and used methods for producing nano-sized oxide materials.As is known, a chelating reagent (complexing agent) can influence both the synthesis process and the final phase composition.The results of sol-gel synthesis with various chelating reagents: citric acid, ethylene glycol, oxalic acid, urea, glycerol and sucrose are presented.The samples were studied by X-ray diffraction.It was found that ethylene glycol and glycerol as chelating reagents make it possible to obtain a homogeneous crystalline material at 900 • C with a YbFe 2 O 4 -type structure, R-3m (166) space group.Unit cell parameters and crystallite size (Halder-Wagner method) for InGaZnO 4 single-phase samples were calculated.KEYWORDS indium-gallium-zinc oxide, In-Ga-Zn-O, IGZO, sol-gel method, complexing agent, chelating reagent, phase formation, nanomaterial ACKNOWLEDGEMENTS This study represents an integration of two diverse projects supported by the Russian Science Foundation (No. 24-19-00468; conceptualization, comparative analysis of the chelating agents influence on the synthesis processes, as well as the synthesis and detailed characterization of samples IGZO-3, IGZO-4, IGZO-5, IGZO-6) and the Ministry of Science and Higher Education of the Russian Federation (Goszadaniye No. 075-03-2024-117, project No. FSMG-