Spintronics in GaN‐Based Semiconductors: Research Progress, Challenges and Perspectives

Abstract Spintronics, exploiting the spin degree of electrons as the information vector, is an attractive field for implementing the beyond‐complementary metal‐oxide‐semiconductor (CMOS) devices. GaN‐based semiconductors, characterized by weak spin‐orbit coupling, long spin relaxation time, and Curie temperature higher than room temperature, are considered ideal materials for advancing spintronics. In addition, GaN‐based semiconductors possess a variety of heterostructures, and different properties can be combined through energy band engineering, this enables addressing the limitation of GaN‐based semiconductors. Nevertheless, there are still challenges in practical applications; for instance, the mechanism of spin relaxation in GaN‐based semiconductors is still unclear, and efficient spin gating has not yet been realized. This review examines the progress of spintronics in GaN‐based semiconductors, and systematically summarizes the advancements in spin injection, transport, manipulation, and device application. The current challenges and future perspectives on the studies of spintronic devices based on GaN‐based semiconductors are also highlighted.