Research advances in Ga2O3-based solar-blind UV detectors

Abstract During the past decades, Ga 2 O 3 has attracted intensive research interests as an ultra-wide-bandgap semiconductor due to its unique characteristics. Ga 2 O 3 devices such as solar-blind ultraviolet photodetectors, power electronics, and gas sensors have been demonstrated. Recently, there has been growing attention toward developing Ga 2 O 3 -based solar-blind ultraviolet photodetectors, which is mainly ascribed to the all-weather capability and high signal-to-noise ratio. In this paper, we introduce the growth methods of Ga 2 O 3 and summarize the relevant progress in the field of solar-blind ultraviolet photodetectors. The Schottky barrier photodiode offers fast response, high quantum efficiency, and low dark current. However, it is not suitable for lowvoltage applications. MSM photodetector is the most common device structure, but the device's tunability and responsivity are relatively poor. Heterojunction photodetector is capable of operating under zero bias with high sensitivity, while it has poor temperature stability. Avalanche photodiode has a high level of responsivity but has the drawbacks of high operating voltage, high noise, and nonlinear output. Field effect phototransistor can achieve greater optical gain and detect weak signals, but such device requires higher quality for Ga 2 O 3 and the application of an external vertical voltage. This review will serve as a reference for researchers engaged in Ga 2 O 3 -based devices and benefits the future study and development of associated electronics.